insulated gate bipolar transistor (warp 2 speed igbt), 100 a GB100DA60UP vishay semiconductors document number: 93001 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 features ? npt warp 2 speed igbt technology with positive temperature coefficient ? square rbsoa ?hexfred ? antiparallel diodes with ultrasoft reverse recovery ? fully isolated package ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, we lding, induction heating ? easy to assemble and parallel ? direct mounting to heatsink ? plug-in compatible with other sot-227 packages ? higher switching frequency up to 150 khz ? lower conduction losses and switching losses ? low emi, requires less snubbing product summary v ces 600 v i c dc 100 a at 61 c v ce(on) typical at 100 a, 25 c 2.4 v i f dc 100 a at 85 c s ot-227 absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 125 a t c = 80 c 85 pulsed collector current i cm 300 clamped inductive load current i lm 300 diode continuous forward current i f t c = 25 c 160 t c = 80 c 105 peak diode forward current i fm 200 gate to emitter voltage v ge 20 v power dissipa tion, igbt p d t c = 25 c 447 w t c = 80 c 250 power dissipation, diode p d t c = 25 c 313 t c = 80 c 175 isolation voltage v isol any terminal to case, t = 1 min 2500 v
GB100DA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93001 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol tes t conditions min. typ. max. units collector to em itter breakdown voltage v br(ces) v ge = 0 v, i c = 250 a 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 100 a - 2.4 2.8 v ge = 15 v, i c = 100 a, t j = 125 c - 3 3.4 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3 3.9 5 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 7 100 a v ge = 0 v, v ce = 600 v, t j = 150 c - 4 10 ma forward voltage drop v fm i c = 100 a, v ge = 0 v - 1.6 2.1 v i c = 100 a, v ge = 0 v, t j = 125 c - 1.7 2 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g i c = 100 a, v cc = 480 v, v ge = 15 v - 460 690 nc gate to emitter charge (turn-on) q ge - 160 250 gate to collector charge (turn-on) q gc - 70 130 turn-on switching loss e on i c = 100 a, v cc = 360 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 18) -0.36- mj turn-off switching loss e off -1.42- total switching loss e tot -1.78- turn-on switching loss e on i c = 100 a, v cc = 360 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 125 c -0.52- turn-off switching loss e off -1.6- total switching loss e tot -2.12- turn-on delay time t d(on) - 264 - ns rise time t r -54- turn-off delay time t d(off) - 257 - fall time t f -80- reverse bias safe operating area rbsoa t j = 150 c, i c = 300 a, r g = 22 ?? v ge = 15 v to 0 v, v cc = 400 v, v p = 600 v, l = 500 h fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v - 95 120 ns diode peak reverse current i rr -1013a diode recovery charge q rr - 480 780 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v, t j = 125 c - 144 185 ns diode peak reverse current i rr -1619a diode recovery charge q rr - 1136 1758 nc
GB100DA60UP insulated gate bipolar transistor (warp 2 speed igbt), 100 a vishay semiconductors document number: 93001 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - maximum dc ig bt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics fig. 4 - maximum dc forward current vs. case temperature thermal and mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 40 - 150 c junction to case igbt r thjc - - 0.28 c/w diode - - 0.4 case to sink per module r thcs -0.05- mounting torque, 6-32 or m3 screw - - 1.3 nm weight -30-g continuous collector current, i c (a) allowable case temperature (c) 0 20406080100120140 0 20 40 60 80 100 120 140 160 v ce (v) i c (a) 1 10 100 1000 0 1 10 100 1000 012345 0 50 100 150 200 tj = 25c tj = 125c v ce (v) ic (a) 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 continuous forward current, i f (a) allowable case temperature (c)
GB100DA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93001 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 5 - typical diode forward characteristics fig. 6 - typical igbt zero gate voltage collector current fig. 7 - typical igbt threshold voltage fig. 8 - typical igbt collector to emitter voltage vs. junction temperature, v ge = 15 v fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 360 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 360 v, r g = 5 ? , v ge = 15 v 0 0.5 1 1.5 2 2.5 0 50 100 150 200 tj = 25c tj = 125c v fm (v) i f (a) 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 t j = 125c t j = 25c v ces (v) i ces (ma) 0.0002 0.0004 0.0006 0.0008 0.001 2 2.5 3 3.5 4 4.5 t j = 125c t j = 25c i c (ma) v geth (v) 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 4 27 a 75 a 100 a t j (c) v ce (v) 10 30 50 70 90 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 e on e off i c (a) energy (mj) 0 20 40 60 80 100 120 10 100 1000 t r td off t f td on i c (a) switching time (s)
GB100DA60UP insulated gate bipolar transistor (warp 2 speed igbt), 100 a vishay semiconductors document number: 93001 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 11 - typical igbt energy loss vs. r g t j = 125 c, i c = 100 a, l = 500 h, v cc = 360 v, v ge = 15 v fig. 12 - typical igbt switching time vs. r g t j = 125 c, l = 500 h, v cc = 360 v, i c = 100 a, v ge = 15 v fig. 13 - typical t rr diode vs. di f /dt v rr = 200 v, i f = 50 a fig. 14 - typical i rr diode vs. di f /dt v rr = 200 v, i f = 50 a fig. 15 - maximum thermal impedance z thjc characteristics (igbt) 01020304050 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 e on e off r g ( ) energy (mj) 0 10 20 30 40 50 10 100 1000 t r td off t f td on r g ( ) switching time (s) 100 1000 50 70 90 110 130 150 170 190 210 t j = 125c t j = 25c di f /dt (a/s) t rr (ns) 100 1000 0 5 10 15 20 25 30 35 40 t j = 125c t j = 25c di f /dt (a/s) i rr (a) z thjc - thermal impedance junction to case (c/w ) rectangular pulse duration (t1) 1e-005 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response )
GB100DA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93001 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 16 - maximum thermal impedance z thjc characteristics (diode) fig. 17a - clamped inductive load test circuit fig. 17b - pulsed collector current test circuit fig. 18a - switching loss test circuit rectangular pulse duration (t1) 1e-005 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) z thjc - thermal impedance junction to case (c/w ) * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: d u e to the 50 v power s u pply, p u lse width and ind u ctor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + -
GB100DA60UP insulated gate bipolar transistor (warp 2 speed igbt), 100 a vishay semiconductors document number: 93001 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 fig. 18b - switching loss waveforms test circuit ordering information table t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 3 - current rating (100 = 100 a) 4 - circuit configuration (d = single switch with antiparallel diode) 5 - package indicator (a = sot-227) 6 - voltage rating (60 = 600 v) 8 - totally lead (pb)-free 7 - speed/type (u = ultrafast igbt) device code 5 13 24 678 g b 100 d a 60 u p
GB100DA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93001 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 3 (c) 2 (g) 1, 4 (e)
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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